WebIRF634A FEATURES BVDSS = 250 V Avalanche Rugged Technology Rugged Gate Oxide Technology RDS (on) = 0.45 Lower Input Capacitance Improved Gate Charge ID = 8.1 A Extended Safe Operating Area Lower Leakage Current: 10A (Max.) @ VDS = 250V TO-220 Lower RDS (ON): 0.327 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings … Webof 7 $GYDQFHG 3RZHU 026) (7 IRF634A FEATURES BVDSS = 250 V Avalanche Rugged Technology Rugged Gate Oxide Technology RDS (on) = 0.45 Lower Input Capacitance ID = 8.1 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current: 10A (Max.) @ VDS = 250V TO-220 Lower RDS (ON): 0.327 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source

IRF630 MOSFET. Datasheet pdf. Equivalent - All Transistors

WebBuy IRF634A FAIRCHILD , Learn more about IRF634A Advanced Power MOSFET, View the manufacturer, and stock, and datasheet pdf for the IRF634A at Jotrin Electronics. WebNovember 2001IRF634B/IRFS634B250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 8.1A, 250V, RDS (on) = 0.45 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 29 nC)planar, DMOS technology. chtr price today

IRF636A MOSFET. Datasheet pdf. Equivalent - All Transistors

WebIRF634A: Descripción: Advanced Power MOSFET: Fabricantes: Fairchild Semiconductor Logotipo: Hay una vista previa y un enlace de descarga de IRF634A (archivo pdf) en la … IRF634A Product details. FEATURES. ♦ Avalanche Rugged Technology. ♦ Rugged Gate Oxide Technology. ♦ Lower Input Capacitance. ♦ Improved Gate Charge. ♦ Extended Safe Operating Area. ♦ Lower Leakage Current: 10µA (Max.) @ VDS= 250V. WebIRFS634A Datasheet Advanced Power MOSEFT - Samsung semiconductor isc N-Channel MOSFET Transistor, Inchange Semiconductor Company Limited desert hearing palm springs